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United Kingdom
This is manufactured by Goford Semiconductor. The manufacturer part number is GT080N10M. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 8mohm @ 20a, 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 100w (tc). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 2915 pf @ 50 v. The product is available in surface mount configuration. The product sgt, is a highly preferred choice for users. The maximum gate charge and given voltages include 50 nc @ 10 v. to-263 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 70a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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