Automotive Standard:
No
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
1200V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
36nC
Maximum Drain Source Resistance Rds:
1.9Ω
Maximum Gate Source Voltage Vgs:
30 V
Height:
4.7mm
Width:
10.4 mm
Length:
15.8mm
Package Type:
Tape & Reel
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
7A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 100µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
690mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
44.2 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
250W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 100 V
Mounting Type:
Surface Mount
Series:
MDmesh™ K5
Supplier Device Package:
H2PAK-2
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH12
ECCN:
EAR99
