Automotive Standard:
No
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
29nC
Maximum Gate Source Voltage Vgs:
22 V
Height:
3.5mm
Width:
14 mm
Length:
18.58mm
Package Type:
Tape & Reel
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
30A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
7
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
72mOhm @ 15A, 18V
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 18 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
185W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
52 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
721 pF @ 400 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
HU3PAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT055
ECCN:
EAR99
