Automotive Standard:
No
Maximum Drain Source Voltage Vds:
800V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Maximum Drain Source Resistance Rds:
340mΩ
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
17.8nC
Package Type:
TO-252
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
12A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
340mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17.8 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 100µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
92W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
950 pF @ 400 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD80
ECCN:
EAR99
