Goford Semiconductor GT080N10T
Product Information
FET Feature:
Standard
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
8mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
100W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2257 pF @ 50 V
standardLeadTime:
8 Weeks
Mounting Type:
Through Hole
Series:
SGT
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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You can order Goford Semiconductor brand products with GT080N10T directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Goford Semiconductor GT080N10T. You can also check on our website or by contacting our customer support team for further order details on Goford Semiconductor GT080N10T.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET24068051 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Goford Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET24068051.
Yes. We ship GT080N10T Internationally to many countries around the world.
This is manufactured by Goford Semiconductor. The manufacturer part number is GT080N10T. The FET features of the product include standard. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 8mohm @ 50a, 10v. The maximum gate charge and given voltages include 35 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 100w (tc). The product's input capacitance at maximum includes 2257 pf @ 50 v. It has a long 8 weeks standard lead time. The product is available in through hole configuration. The product sgt, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 70a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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