Toshiba Semiconductor and Storage SSM3K16FV,L3F

Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C
Package / Case:
SOT-723
Rds On (Max) @ Id, Vgs:
3Ohm @ 10mA, 4V
title:
SSM3K16FV,L3F
Vgs(th) (Max) @ Id:
1.1V @ 100µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150mW (Ta)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
9.3 pF @ 3 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
VESM
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K16FV,L3F. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has 150°c operating temperature range. Moreover, the product comes in sot-723. It has a maximum Rds On and voltage of 3ohm @ 10ma, 4v. The typical Vgs (th) (max) of the product is 1.1v @ 100µa. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150mw (ta). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 9.3 pf @ 3 v. The product is available in surface mount configuration. vesm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 100ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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