Vishay Siliconix SIDR220DP-T1-RE3
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
200 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
+16V, -12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
6.25W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10850 pF @ 10 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8DC
Current - Continuous Drain (Id) @ 25°C:
87.7A (Ta), 100A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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We accept all major payment methods for all products including ET23443470. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIDR220DP-T1-RE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIDR220DP-T1-RE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIDR220DP-T1-RE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET23443470 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET23443470.
Yes. We ship SIDR220DP-T1-RE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SIDR220DP-T1-RE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. The maximum gate charge and given voltages include 200 nc @ 10 v. It has a maximum Rds On and voltage of 5.8mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 25 v drain to source voltage. The maximum Vgs rate is +16v, -12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 6.25w (ta), 125w (tc). The product's input capacitance at maximum includes 10850 pf @ 10 v. It has a long 14 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® so-8dc is the supplier device package value. The continuous current drain at 25°C is 87.7a (ta), 100a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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