Forward Voltage Vf:
1.5V
Width:
4.9 mm
Automotive Standard:
AEC-Q101
Typical Gate Charge Qg @ Vgs:
41nC
Package Type:
PowerFLAT
Maximum Continuous Drain Current Id:
55A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
45mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
12V
Channel Type:
Type N
Length:
6mm
Standards/Approvals:
UL
Pin Count:
8
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
188W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
STL
Height:
1mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
0.75mOhm @ 60A, 10V
Gate Charge (Qg) (Max) @ Vgs:
95 nC @ 10 V
Vgs(th) (Max) @ Id:
2V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STL325N4LF8AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/16546730
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
188W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7657 pF @ 25 V
Qualification:
AEC-Q101
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount, Wettable Flank
Grade:
Automotive
Series:
-
Supplier Device Package:
PowerFlat™ (5x6)
Current - Continuous Drain (Id) @ 25°C:
373A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STL325
ECCN:
EAR99
