Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
117W
Maximum Drain Source Voltage Vds:
1200V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
22 V
Series:
NTM
Forward Voltage Vf:
1.2V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
45nC
Package Type:
DFN-5
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
22mΩ
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
58A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
5
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
97 nC @ 10 V
Vgs(th) (Max) @ Id:
3V @ 351µA
REACH Status:
REACH Unaffected
edacadModel:
NTMFS002N10MCLT1G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/16528625
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta), 189W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
7200 pF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
22A (Ta), 175A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
