Automotive Standard:
AEC-Q101
Maximum Power Dissipation Pd:
117W
Maximum Drain Source Voltage Vds:
1200V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
22 V
Series:
NTH
Forward Voltage Vf:
1.2V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
74nC
Package Type:
TO-247
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
22mΩ
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
58A
Product Type:
MOSFET
Maximum Operating Temperature:
175°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
70mOhm @ 20A, 18V
Gate Charge (Qg) (Max) @ Vgs:
74 nC @ 18 V
Vgs(th) (Max) @ Id:
4.3V @ 6.5mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -8V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
176W (Tc)
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1473 pF @ 325 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
47A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
