Toshiba Semiconductor and Storage TW107N65C,S1F
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 1.2mA
Operating Temperature:
175°C
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
145mOhm @ 10A, 18V
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
76W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
600 pF @ 400 V
standardLeadTime:
24 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search TW107N65C,S1F on website for other similar products.
We accept all major payment methods for all products including ET23272970. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TW107N65C,S1F directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TW107N65C,S1F. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TW107N65C,S1F.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET23272970 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET23272970.
Yes. We ship TW107N65C,S1F Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TW107N65C,S1F. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1.2ma. The product has 175°c operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 145mohm @ 10a, 18v. The maximum gate charge and given voltages include 21 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 76w (tc). The product's input capacitance at maximum includes 600 pf @ 400 v. It has a long 24 weeks standard lead time. The product is available in through hole configuration. to-247 is the supplier device package value. The continuous current drain at 25°C is 20a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.