GeneSiC Semiconductor G3R12MT12K
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.7V @ 50mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
13mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs:
288 nC @ 15 V
RoHS Status:
RoHS Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
567W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9335 pF @ 800 V
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Current - Continuous Drain (Id) @ 25°C:
157A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
G3R12M
ECCN:
EAR99
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FAQs
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You can order GeneSiC Semiconductor brand products with G3R12MT12K directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of GeneSiC Semiconductor G3R12MT12K. You can also check on our website or by contacting our customer support team for further order details on GeneSiC Semiconductor G3R12MT12K.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET23234434 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "GeneSiC Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET23234434.
Yes. We ship G3R12MT12K Internationally to many countries around the world.
This is manufactured by GeneSiC Semiconductor. The manufacturer part number is G3R12MT12K. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.7v @ 50ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 13mohm @ 100a, 18v. The maximum gate charge and given voltages include 288 nc @ 15 v. The product is rohs compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +22v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 567w (tc). The product's input capacitance at maximum includes 9335 pf @ 800 v. It has a long 26 weeks standard lead time. The product is available in through hole configuration. to-247-4 is the supplier device package value. The continuous current drain at 25°C is 157a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to g3r12m, a base product number of the product. The product is designated with the ear99 code number.
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