Renesas RJK1003DPP-E0#T2
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
150°C
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
11mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
59 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4150 pF @ 10 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220FP
Current - Continuous Drain (Id) @ 25°C:
50A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship RJK1003DPP-E0#T2 Internationally to many countries around the world.
This is manufactured by Renesas. The manufacturer part number is RJK1003DPP-E0#T2. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 11mohm @ 25a, 10v. The maximum gate charge and given voltages include 59 nc @ 10 v. The product is rohs non-compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 25w (tc). The product's input capacitance at maximum includes 4150 pf @ 10 v. The product is available in through hole configuration. to-220fp is the supplier device package value. The continuous current drain at 25°C is 50a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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