onsemi 2SJ635-TL-E
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
150°C
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Rds On (Max) @ Id, Vgs:
60mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
RoHS Status:
RoHS non-compliant
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
1W (Ta), 30W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2200 pF @ 20 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TP
Current - Continuous Drain (Id) @ 25°C:
12A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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FAQs
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Yes. We ship 2SJ635-TL-E Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is 2SJ635-TL-E. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.6v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. It has a maximum Rds On and voltage of 60mohm @ 6a, 10v. The maximum gate charge and given voltages include 45 nc @ 10 v. The product is rohs non-compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 1w (ta), 30w (tc). The product's input capacitance at maximum includes 2200 pf @ 20 v. The product is available in through hole configuration. tp is the supplier device package value. The continuous current drain at 25°C is 12a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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