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This is manufactured by Harris Corporation. The manufacturer part number is IRFD1Z3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 4-dip (0.300", 7.62mm). It has a maximum Rds On and voltage of 3.2ohm @ 250ma, 10v. The maximum gate charge and given voltages include 3 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1w (tc). The product's input capacitance at maximum includes 50 pf @ 25 v. The product is available in through hole configuration. 4-dip, hexdip is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 400ma (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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