Fairchild Semiconductor FDZ3N513ZT

FDZ3N513ZT Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 125°C (TJ)
Package / Case:
4-XFBGA, WLCSP
Rds On (Max) @ Id, Vgs:
462mOhm @ 300mA, 4.5V
title:
FDZ3N513ZT
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+5.5V, -300mV
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
85 pF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
1 nC @ 4.5 V
Supplier Device Package:
4-WLCSP (1x1)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
1.1A
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDZ3N513ZT. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 125°c (tj) operating temperature range. Moreover, the product comes in 4-xfbga, wlcsp. It has a maximum Rds On and voltage of 462mohm @ 300ma, 4.5v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The product has a 30 v drain to source voltage. The maximum Vgs rate is +5.5v, -300mv. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1w (ta). The product's input capacitance at maximum includes 85 pf @ 15 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 1 nc @ 4.5 v. 4-wlcsp (1x1) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 1.1a. This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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