Fairchild Semiconductor FQU6N25TU

FQU6N25TU Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
8.5 nC @ 10 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
1Ohm @ 2.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±30V
Power Dissipation (Max):
2.5W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I-PAK
Current - Continuous Drain (Id) @ 25°C:
4.4A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQU6N25TU. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum gate charge and given voltages include 8.5 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 1ohm @ 2.2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 250 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 2.5w (ta), 45w (tc). The product's input capacitance at maximum includes 300 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. i-pak is the supplier device package value. The continuous current drain at 25°C is 4.4a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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