onsemi CPH6429-TL-E

CPH6429-TL-E onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
Not applicable
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
220mOhm @ 1A, 4V
Gate Charge (Qg) (Max) @ Vgs:
4.2 nC @ 4 V
Vgs(th) (Max) @ Id:
-
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
60 V
Input Capacitance (Ciss) (Max) @ Vds:
325 pF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
6-CPH
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Power Dissipation (Max):
1.6W (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is CPH6429-TL-E. It is assigned with possible HTSUS value of 8541.29.0095. The product is not applicable. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 220mohm @ 1a, 4v. The maximum gate charge and given voltages include 4.2 nc @ 4 v. It carries FET type n-channel. The product has a 60 v drain to source voltage. The product's input capacitance at maximum includes 325 pf @ 20 v. The product is available in surface mount configuration. 6-cph is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 2a (ta). The product carries maximum power dissipation 1.6w (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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