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This is Silicon carbide Power MOSFET 650 V 55 m manufactured by STMicroelectronics. The manufacturer part number is SCTWA35N65G2V-4. It has a maximum of 650 v drain source voltage. The product carries enhancement channel mode. The product is available in through hole configuration. The transistor is manufactured from highly durable silicon material. The product carries 5v of maximum gate threshold voltage. It provides up to 0.067 ω maximum drain source resistance. The package is a sort of hip247-4. It consists of 1 elements per chip. While 45 a of maximum continuous drain current. The product is available in [Cannel Type] channel. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 67mohm @ 20a, 20v. The maximum gate charge and given voltages include 73 nc @ 20 v. The typical Vgs (th) (max) of the product is 5v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v, 20v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +18v, -5v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 240w (tc). It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 1370 pf @ 400 v. to-247-4 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 45a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sctwa35, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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