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Silicon carbide Power MOSFET 650 V, 55 m

SCTWA35N65G2V-4 Silicon carbide Power MOSFET 650 V, 55 m
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.067 Ω
Package Type:
HiP247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
45 A
Transistor Material:
Silicon
Pin Count:
4
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 1mA
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
edacadModel:
SCTWA35N65G2V-4 Models
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
edacadModelUrl:
/en/models/18085222
Package:
Bulk
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+18V, -5V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 400 V
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Power Dissipation (Max):
240W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SCTWA35
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is Silicon carbide Power MOSFET 650 V 55 m manufactured by STMicroelectronics. The manufacturer part number is SCTWA35N65G2V-4. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.067 ω maximum drain source resistance. The package is a sort of hip247-4. It consists of 1 elements per chip. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 67mohm @ 20a, 20v. The maximum gate charge and given voltages include 73 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v, 20v. It is shipped in bulk package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +18v, -5v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1370 pf @ 400 v. It has a long 52 weeks standard lead time. to-247-4 is the supplier device package value. The continuous current drain at 25°C is 45a (tc). The product carries maximum power dissipation 240w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sctwa35, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - SCTWA35N65G2V-4(Technical Reference)

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