NXP Semiconductors PSMN4R3-80PS,127
Product Information
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
111 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
8161 pF @ 40 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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This is manufactured by NXP Semiconductors. The manufacturer part number is PSMN4R3-80PS,127. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 111 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 4.3mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 306w (tc). The product's input capacitance at maximum includes 8161 pf @ 40 v. The product is available in through hole configuration. to-220ab is the supplier device package value. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology.
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