NXP Semiconductors PSMN2R0-60ES,127
Product Information
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
137 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
2.2mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
338W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9997 pF @ 30 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
I2PAK
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN2R0
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This is manufactured by NXP Semiconductors. The manufacturer part number is PSMN2R0-60ES,127. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. The maximum gate charge and given voltages include 137 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 2.2mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 338w (tc). The product's input capacitance at maximum includes 9997 pf @ 30 v. The product is available in through hole configuration. i2pak is the supplier device package value. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn2r0, a base product number of the product.
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