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This is manufactured by NXP Semiconductors. The manufacturer part number is PSMN2R0-60ES,127. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 2.2mohm @ 25a, 10v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 338w (tc). The product's input capacitance at maximum includes 9997 pf @ 30 v. The product is available in through hole configuration. The maximum gate charge and given voltages include 137 nc @ 10 v. i2pak is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn2r0, a base product number of the product.
For more information please check the datasheets.
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