NXP Semiconductors PSMN085-150K,518
Product Information
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
40 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
3.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1310 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
8-SO
Current - Continuous Drain (Id) @ 25°C:
3.5A (Tc)
Technology:
MOSFET (Metal Oxide)
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Yes. We ship PSMN085-150K,518 Internationally to many countries around the world.
This is manufactured by NXP Semiconductors. The manufacturer part number is PSMN085-150K,518. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 40 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 85mohm @ 3.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 3.5w (tc). The product's input capacitance at maximum includes 1310 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 8-so is the supplier device package value. The continuous current drain at 25°C is 3.5a (tc). This product use mosfet (metal oxide) technology.
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