Automotive Standard:
No
Maximum Power Dissipation Pd:
237.5W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
80V
Channel Mode:
N
Typical Gate Charge Qg @ Vgs:
121nC
Maximum Drain Source Resistance Rds:
1.7mΩ
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Height:
13.28mm
Width:
2.4 mm
Length:
10.2mm
Package Type:
H-PSOF
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
241.3A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
8
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerSFN
Rds On (Max) @ Id, Vgs:
1.7mOhm @ 80A, 10V
title:
NVBLS1D7N08H
Vgs(th) (Max) @ Id:
4V @ 479µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
4.4W (Ta), 237.5W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
16 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
7675 pF @ 40 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
121 nC @ 10 V
Supplier Device Package:
8-HPSOF
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
33A (Ta), 241.3A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
