Forward Voltage Vf:
4.8V
Width:
5.2 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
283nC
Package Type:
TO-247
Maximum Continuous Drain Current Id:
142A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
12mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
650V
Channel Type:
Type N
Length:
15.8mm
Standards/Approvals:
No
Pin Count:
4
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
500W
Channel Mode:
N
Maximum Gate Source Voltage Vgs:
22 V
Series:
SiC Power
Height:
22.74mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
18mOhm @ 75A, 18V
title:
NTH4L015N065SC1
Vgs(th) (Max) @ Id:
4.3V @ 25mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -8V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
500W (Tc)
standardLeadTime:
17 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4790 pF @ 325 V
Mounting Type:
Through Hole
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
283 nC @ 18 V
Supplier Device Package:
TO-247-4L
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
142A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
