onsemi NTH4L015N065SC1
Product Information
Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
142 A
Mounting Type:
Through Hole
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.012 Ω
Package Type:
TO-247-4
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
4
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.3V @ 25mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Rds On (Max) @ Id, Vgs:
18mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs:
283 nC @ 18 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -8V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
500W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4790 pF @ 325 V
standardLeadTime:
19 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4L
Current - Continuous Drain (Id) @ 25°C:
142A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search NTH4L015N065SC1 on website for other similar products.
We accept all major payment methods for all products including ET21919621. Please check your shopping cart at the time of order.
You can order onsemi brand products with NTH4L015N065SC1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of onsemi NTH4L015N065SC1. You can also check on our website or by contacting our customer support team for further order details on onsemi NTH4L015N065SC1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21919621 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21919621.
Yes. We ship NTH4L015N065SC1 Internationally to many countries around the world.
This is manufactured by onsemi. The manufacturer part number is NTH4L015N065SC1. It has a maximum of 650 v drain source voltage. While 142 a of maximum continuous drain current. The product is available in through hole configuration. The product sic power, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.012 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. The transistor is manufactured from highly durable sic material. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.3v @ 25ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 18mohm @ 75a, 18v. The maximum gate charge and given voltages include 283 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is +22v, -8v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 500w (tc). The product's input capacitance at maximum includes 4790 pf @ 325 v. It has a long 19 weeks standard lead time. to-247-4l is the supplier device package value. The continuous current drain at 25°C is 142a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.