onsemi NTBGS004N10G

NTBGS004N10G onsemi
NTBGS004N10G
onsemi

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0041 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
203 A
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 100A, 10V
title:
NTBGS004N10G
Vgs(th) (Max) @ Id:
4V @ 500µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.7W (Ta), 340W (Tc)
standardLeadTime:
22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
12100 pF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
178 nC @ 10 V
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 203A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTBGS004N10G. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product sic power, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0041 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 203 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-7, d2pak (6 leads + tab). It has a maximum Rds On and voltage of 4.1mohm @ 100a, 10v. The typical Vgs (th) (max) of the product is 4v @ 500µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.7w (ta), 340w (tc). It has a long 22 weeks standard lead time. The product's input capacitance at maximum includes 12100 pf @ 50 v. The maximum gate charge and given voltages include 178 nc @ 10 v. to-263 (d2pak) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 21a (ta), 203a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Datasheet - NTBGS004N10G(Technical Reference)
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Mult Dev Assembly 08/Jan/2024(PCN Assembly/Origin)
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NTBGS004N10G(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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