onsemi FDT4N50NZU

FDT4N50NZU onsemi
FDT4N50NZU
onsemi

Product Information

Maximum Drain Source Voltage:
500 V
Maximum Continuous Drain Current:
2 A
Mounting Type:
Surface Mount
Series:
UniFET II
Channel Type:
N
Maximum Gate Threshold Voltage:
5.5V
Maximum Drain Source Resistance:
3 Ω
Package Type:
SOT-223
Number of Elements per Chip:
1
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
3Ohm @ 1A, 10V
title:
FDT4N50NZU
Vgs(th) (Max) @ Id:
5.5V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
476 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UltraFRFET™, Unifet™ II
Gate Charge (Qg) (Max) @ Vgs:
9.1 nC @ 10 V
Supplier Device Package:
SOT-223 (TO-261)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
RoHs Compliant
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This is manufactured by onsemi. The manufacturer part number is FDT4N50NZU. It has a maximum of 500 v drain source voltage. While 2 a of maximum continuous drain current. The product is available in surface mount configuration. The product unifet ii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5.5v of maximum gate threshold voltage. It provides up to 3 ω maximum drain source resistance. The package is a sort of sot-223. It consists of 1 elements per chip. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 3ohm @ 1a, 10v. The typical Vgs (th) (max) of the product is 5.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 500 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 476 pf @ 25 v. The product ultrafrfet™, unifet™ ii, is a highly preferred choice for users. The maximum gate charge and given voltages include 9.1 nc @ 10 v. sot-223 (to-261) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 2a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Datasheet - FDT4N50NZU(Technical Reference)
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Wafer Fab Change 27/Dec/2022(PCN Assembly/Origin)
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FDT4N50NZU(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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FAQs

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You will get a confirmation email regarding your order of onsemi FDT4N50NZU. You can also check on our website or by contacting our customer support team for further order details on onsemi FDT4N50NZU.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21919556 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21919556.
Yes. We ship FDT4N50NZU Internationally to many countries around the world.