Automotive Standard:
No
Maximum Power Dissipation Pd:
76W
Maximum Drain Source Voltage Vds:
600V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Maximum Drain Source Resistance Rds:
750mΩ
Forward Voltage Vf:
1.6V
Channel Type:
Type N
Typical Gate Charge Qg @ Vgs:
10nC
Package Type:
TO-252
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
6A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
750mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
Vgs(th) (Max) @ Id:
4.75V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STD9N60M6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/18085327
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
273 pF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Power Dissipation (Max):
76W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD9
ECCN:
EAR99
