N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220 onsemi NTP095N65S3H
Product Information
Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
NTP095N
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.095 Ω
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
30 A
Transistor Material:
Si
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 2.8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
95mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2833 pF @ 400 V
Mounting Type:
Through Hole
Series:
SuperFET® III
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is N-Channel MOSFET 30 A 650 V 3-Pin TO-220 manufactured by onsemi. The manufacturer part number is NTP095N65S3H. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product ntp095n, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.095 ω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 2.8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 95mohm @ 15a, 10v. The maximum gate charge and given voltages include 58 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 208w (tc). The product's input capacitance at maximum includes 2833 pf @ 400 v. The product superfet® iii, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 30a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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