N-Channel MOSFET, 113 A, 100 V, 5-Pin DFN onsemi NTMFS4D2N10MDT1G
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NTMFS4D2N
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0043 Ω
Package Type:
DFN
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
113 A
Transistor Material:
Si
Pin Count:
5
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 239µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 46A, 10V
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.8W (Ta), 132W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3100 pF @ 50 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C:
16.4A (Ta), 113A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET, 113 A, 100 V, 5-Pin DFN onsemi NTMFS4D2N10MDT1G. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 113 A, 100 V, 5-Pin DFN onsemi NTMFS4D2N10MDT1G.
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This is N-Channel MOSFET 113 A 100 V 5-Pin DFN manufactured by onsemi. The manufacturer part number is NTMFS4D2N10MDT1G. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ntmfs4d2n, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0043 ω maximum drain source resistance. The package is a sort of dfn. It consists of 1 elements per chip. While 113 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 5 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 239µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn, 5 leads. It has a maximum Rds On and voltage of 4.3mohm @ 46a, 10v. The maximum gate charge and given voltages include 60 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.8w (ta), 132w (tc). The product's input capacitance at maximum includes 3100 pf @ 50 v. It has a long 26 weeks standard lead time. 5-dfn (5x6) (8-sofl) is the supplier device package value. The continuous current drain at 25°C is 16.4a (ta), 113a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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