Forward Voltage Vf:
1.6V
Width:
6.2 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
10.3nC
Package Type:
TO-252
Maximum Continuous Drain Current Id:
8A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
500mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
600V
Channel Type:
Type N
Length:
6.6mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
90W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Series:
STD11N60M6
Height:
2.4mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
520mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs:
10.3 nC @ 10 V
Vgs(th) (Max) @ Id:
4.75V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STD11N60M6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/18086034
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
387 pF @ 100 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Power Dissipation (Max):
90W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD11
ECCN:
EAR99
