N-Channel MOSFET, 100 A, 100 V, 8-Pin VSONP Texas Instruments CSD19531Q5A
Product Information
Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NexFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.7V
Maximum Drain Source Resistance:
6400000 Ω
Package Type:
VSONP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Pin Count:
8
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.3V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6.4mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs:
48 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD19531Q5A Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/4437460
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.3W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3870 pF @ 50 V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19531
ECCN:
EAR99
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This is N-Channel MOSFET 100 A 100 V 8-Pin VSONP manufactured by Texas Instruments. The manufacturer part number is CSD19531Q5A. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product nexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.7v of maximum gate threshold voltage. It provides up to 6400000 ω maximum drain source resistance. The package is a sort of vsonp. It consists of 1 elements per chip. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 6.4mohm @ 16a, 10v. The maximum gate charge and given voltages include 48 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.3w (ta), 125w (tc). The product's input capacitance at maximum includes 3870 pf @ 50 v. It has a long 6 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 8-vsonp (5x6) is the supplier device package value. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd19531, a base product number of the product. The product is designated with the ear99 code number.
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