N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK onsemi NTD360N80S3Z
Product Information
Maximum Drain Source Voltage:
800 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
360 mΩ
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
13 A
Transistor Material:
Si
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.8V @ 300µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
360mOhm @ 6.5A, 10V
edacadModel:
NTD360N80S3Z Models
Gate Charge (Qg) (Max) @ Vgs:
25.3 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/12180076
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
96W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1143 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Supplier Device Package:
TO-252 (DPAK)
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTD360
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK onsemi NTD360N80S3Z. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET Transistor & Diode, 13 A, 800 V, 3-Pin DPAK onsemi NTD360N80S3Z.
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Yes. We ship NTD360N80S3Z Internationally to many countries around the world.
This is N-Channel MOSFET Transistor & Diode 13 A 800 V 3-Pin DPAK manufactured by onsemi. The manufacturer part number is NTD360N80S3Z. It has a maximum of 800 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product superfet iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 360 mω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 13 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.8v @ 300µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 360mohm @ 6.5a, 10v. The maximum gate charge and given voltages include 25.3 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 96w (tc). The product's input capacitance at maximum includes 1143 pf @ 400 v. The product superfet® iii, is a highly preferred choice for users. to-252 (dpak) is the supplier device package value. The continuous current drain at 25°C is 13a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntd360, a base product number of the product. The product is designated with the ear99 code number.
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