SiC N-Channel MOSFET Transistor, 185 A, 150 V, 7-Pin D2PAK ON Semiconductor NVBGS4D1N15MC
Product Information
Maximum Drain Source Voltage:
150 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NVB
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.0041 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
185 A
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 104A, 10V
Gate Charge (Qg) (Max) @ Vgs:
88.9 nC @ 10 V
Vgs(th) (Max) @ Id:
4.5V @ 574µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
150 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.7W (Ta), 316W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7285 pF @ 75 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 185A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVBGS4
ECCN:
EAR99
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of SiC N-Channel MOSFET Transistor, 185 A, 150 V, 7-Pin D2PAK ON Semiconductor NVBGS4D1N15MC. You can also check on our website or by contacting our customer support team for further order details on SiC N-Channel MOSFET Transistor, 185 A, 150 V, 7-Pin D2PAK ON Semiconductor NVBGS4D1N15MC.
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This is SiC N-Channel MOSFET Transistor 185 A 150 V 7-Pin D2PAK ON Semiconductor manufactured by onsemi. The manufacturer part number is NVBGS4D1N15MC. It has a maximum of 150 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product nvb, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.0041 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 185 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-7, d2pak (6 leads + tab). It has a maximum Rds On and voltage of 4.1mohm @ 104a, 10v. The maximum gate charge and given voltages include 88.9 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.5v @ 574µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 8v, 10v. It is shipped in tape & reel (tr) package . The product has a 150 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.7w (ta), 316w (tc). The product's input capacitance at maximum includes 7285 pf @ 75 v. The product is automotive, a grade of class. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 20a (ta), 185a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvbgs4, a base product number of the product. The product is designated with the ear99 code number.
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