Forward Voltage Vf:
1.2V
Width:
1.3 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
103nC
Package Type:
LFPAK
Maximum Continuous Drain Current Id:
262A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
1.3Ω
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type N
Length:
4.9mm
Standards/Approvals:
RoHS
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
180W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
NTMJS1D4N06CL
Height:
5mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 280µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-1205, 8-LFPAK56
Rds On (Max) @ Id, Vgs:
1.3mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
103 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NTMJS1D4N06CLTWG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/11592821
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
4W (Ta), 180W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7430 pF @ 30 V
standardLeadTime:
19 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-LFPAK
Current - Continuous Drain (Id) @ 25°C:
39A (Ta), 262A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMJS1
ECCN:
EAR99
