Maximum Drain Source Voltage:
75 V
Typical Gate Charge @ Vgs:
169 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
375 W
Series:
PowerTrench
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.7mm
Width:
4.5mm
Length:
9.9mm
Minimum Gate Threshold Voltage:
2.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
235 A
Transistor Material:
Si
Maximum Drain Source Resistance:
3.2 mΩ
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 75A, 10V
Gate Charge (Qg) (Max) @ Vgs:
220 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
375W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
15160 pF @ 25 V
standardLeadTime:
17 Weeks
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDP032
ECCN:
EAR99
