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Toshiba Semiconductor and Storage SSM3J168F,LXHF

SSM3J168F-LXHF Toshiba Semiconductor and Storage SSM3J168F,LXHF
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
1.55Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
3 nC @ 10 V
Vgs(th) (Max) @ Id:
2V @ 1mA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
+10V, -20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
600mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
82 pF @ 10 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
U-MOSVI
Supplier Device Package:
S-Mini
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J168F,LXHF. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has 150°c operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 1.55ohm @ 200ma, 10v. The maximum gate charge and given voltages include 3 nc @ 10 v. The typical Vgs (th) (max) of the product is 2v @ 1ma. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It is shipped in tape & reel (tr) package . The product has a 60 v drain to source voltage. The maximum Vgs rate is +10v, -20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 600mw (ta). The product's input capacitance at maximum includes 82 pf @ 10 v. The product is available in surface mount configuration. The product is automotive, a grade of class. The product u-mosvi, is a highly preferred choice for users. s-mini is the supplier device package value. The continuous current drain at 25°C is 400ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET21206225 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21206225.
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