Nexperia USA Inc. GAN041-650WSBQ
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
41mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs:
22 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
GAN041-650WSBQ Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/14288150
Package:
Tube
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
187W
Input Capacitance (Ciss) (Max) @ Vds:
1500 pF @ 400 V
standardLeadTime:
27 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
47.2A
Technology:
GaNFET (Cascode Gallium Nitride FET)
ECCN:
EAR99
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FAQs
Yes. You can also search GAN041-650WSBQ on website for other similar products.
We accept all major payment methods for all products including ET21169552. Please check your shopping cart at the time of order.
You can order Nexperia USA Inc. brand products with GAN041-650WSBQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Nexperia USA Inc. GAN041-650WSBQ. You can also check on our website or by contacting our customer support team for further order details on Nexperia USA Inc. GAN041-650WSBQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21169552 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Nexperia USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET21169552.
Yes. We ship GAN041-650WSBQ Internationally to many countries around the world.
This is manufactured by Nexperia USA Inc.. The manufacturer part number is GAN041-650WSBQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 41mohm @ 32a, 10v. The maximum gate charge and given voltages include 22 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 187w. The product's input capacitance at maximum includes 1500 pf @ 400 v. It has a long 27 weeks standard lead time. The product is available in through hole configuration. to-247-3 is the supplier device package value. The continuous current drain at 25°C is 47.2a. This product use ganfet (cascode gallium nitride fet) technology. The product is designated with the ear99 code number.
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