Toshiba Semiconductor and Storage TW070J120B,S1Q
Product Information
FET Feature:
Standard
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5.8V @ 20mA
Operating Temperature:
-55°C ~ 175°C
Package / Case:
TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs:
90mOhm @ 18A, 20V
edacadModel:
TW070J120B,S1Q Models
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 20 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
edacadModelUrl:
/en/models/13181304
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
±25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
272W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1680 pF @ 800 V
standardLeadTime:
15 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(N)
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
TW070J120
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship TW070J120B,S1Q Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TW070J120B,S1Q. The FET features of the product include standard. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5.8v @ 20ma. The product has -55°c ~ 175°c operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. It has a maximum Rds On and voltage of 90mohm @ 18a, 20v. The maximum gate charge and given voltages include 67 nc @ 20 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is ±25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 272w (tc). The product's input capacitance at maximum includes 1680 pf @ 800 v. It has a long 15 weeks standard lead time. The product is available in through hole configuration. to-3p(n) is the supplier device package value. The continuous current drain at 25°C is 36a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to tw070j120, a base product number of the product. The product is designated with the ear99 code number.
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