GeneSiC Semiconductor G3R20MT12N

G3R20MT12N GeneSiC Semiconductor
GeneSiC Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.69V @ 15mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
24mOhm @ 60A, 15V
Gate Charge (Qg) (Max) @ Vgs:
219 nC @ 15 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+20V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
365W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5873 pF @ 800 V
standardLeadTime:
26 Weeks
Mounting Type:
Chassis Mount
Series:
G3R™
Supplier Device Package:
SOT-227
Current - Continuous Drain (Id) @ 25°C:
105A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
G3R20
ECCN:
EAR99
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This is manufactured by GeneSiC Semiconductor. The manufacturer part number is G3R20MT12N. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.69v @ 15ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-227-4, minibloc. It has a maximum Rds On and voltage of 24mohm @ 60a, 15v. The maximum gate charge and given voltages include 219 nc @ 15 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +20v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 365w (tc). The product's input capacitance at maximum includes 5873 pf @ 800 v. It has a long 26 weeks standard lead time. The product is available in chassis mount configuration. The product g3r™, is a highly preferred choice for users. sot-227 is the supplier device package value. The continuous current drain at 25°C is 105a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to g3r20, a base product number of the product. The product is designated with the ear99 code number.

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G3R20MT12N(Datasheets)

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