Vishay Siliconix SI2336DS-T1-BE3

SI2336DS-T1-BE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
42mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 8 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1.25W (Ta), 1.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
560 pF @ 15 V
standardLeadTime:
27 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
4.3A (Ta), 5.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI2336
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI2336DS-T1-BE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 42mohm @ 3.8a, 4.5v. The maximum gate charge and given voltages include 15 nc @ 8 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.25w (ta), 1.8w (tc). The product's input capacitance at maximum includes 560 pf @ 15 v. It has a long 27 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 4.3a (ta), 5.2a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si2336, a base product number of the product. The product is designated with the ear99 code number.

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Mult Devs Manufacturing Capacity Expansion 13/Mar/2023(PCN Assembly/Origin)
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Material Compliance(Environmental Information)
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Vishay Aluminum Capacitor and Energy Storage REACH(Environmental Information)

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FAQs

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Yes. We ship SI2336DS-T1-BE3 Internationally to many countries around the world.