Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Toshiba Semiconductor and Storage TK60F10N1L,LXGQ

TK60F10N1L-LXGQ Toshiba Semiconductor and Storage TK60F10N1L,LXGQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 500µA
Operating Temperature:
175°C
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
6.11mOhm @ 30A, 10V
edacadModel:
TK60F10N1L,LXGQ Models
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/12821388
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
205W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4320 pF @ 10 V
standardLeadTime:
74 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220SM(W)
Current - Continuous Drain (Id) @ 25°C:
60A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK60F10
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK60F10N1L,LXGQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 500µa. The product has 175°c operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 6.11mohm @ 30a, 10v. The maximum gate charge and given voltages include 60 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 205w (tc). The product's input capacitance at maximum includes 4320 pf @ 10 v. It has a long 74 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220sm(w) is the supplier device package value. The continuous current drain at 25°C is 60a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk60f10, a base product number of the product. The product is designated with the ear99 code number.

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search TK60F10N1L,LXGQ on website for other similar products.
We accept all major payment methods for all products including ET20188584. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with TK60F10N1L,LXGQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TK60F10N1L,LXGQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TK60F10N1L,LXGQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20188584 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20188584.
Yes. We ship TK60F10N1L,LXGQ Internationally to many countries around the world.