Toshiba Semiconductor and Storage TK160F10N1L,LXGQ

TK160F10N1L-LXGQ Toshiba Semiconductor and Storage TK160F10N1L,LXGQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 1mA
Operating Temperature:
175°C
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
2.4mOhm @ 80A, 10V
edacadModel:
TK160F10N1L,LXGQ Models
Gate Charge (Qg) (Max) @ Vgs:
122 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/12821425
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Input Capacitance (Ciss) (Max) @ Vds:
10100 pF @ 10 V
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
TO-220SM(W)
Current - Continuous Drain (Id) @ 25°C:
160A (Ta)
Power Dissipation (Max):
375W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK160F10
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK160F10N1L,LXGQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 2.4mohm @ 80a, 10v. The maximum gate charge and given voltages include 122 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product's input capacitance at maximum includes 10100 pf @ 10 v. It has a long 52 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. to-220sm(w) is the supplier device package value. The continuous current drain at 25°C is 160a (ta). The product carries maximum power dissipation 375w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tk160f10, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship TK160F10N1L,LXGQ Internationally to many countries around the world.