Enrgtech

Deliver to

United Kingdom

Categories

Brands

Part Numbers

Top Products

0

Toshiba Semiconductor and Storage XPW6R30ANB,L1XHQ

XPW6R30ANB-L1XHQ Toshiba Semiconductor and Storage XPW6R30ANB,L1XHQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 500µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
6.3mOhm @ 22.5A, 10V
edacadModel:
XPW6R30ANB,L1XHQ Models
Gate Charge (Qg) (Max) @ Vgs:
52 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/12352701
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
960mW (Ta), 132W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3240 pF @ 10 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-DSOP Advance
Current - Continuous Drain (Id) @ 25°C:
45A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
XPW6R30
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is XPW6R30ANB,L1XHQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 500µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 6.3mohm @ 22.5a, 10v. The maximum gate charge and given voltages include 52 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 960mw (ta), 132w (tc). The product's input capacitance at maximum includes 3240 pf @ 10 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-dsop advance is the supplier device package value. The continuous current drain at 25°C is 45a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to xpw6r30, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
Term of Use Statement(Other Related Documents)

Reviews

  • Be the first to review.
Don’t hesitate to ask questions for better clarification.


FAQs

Yes. You can also search XPW6R30ANB,L1XHQ on website for other similar products.
We accept all major payment methods for all products including ET20011504. Please check your shopping cart at the time of order.
You can order Toshiba Semiconductor and Storage brand products with XPW6R30ANB,L1XHQ directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage XPW6R30ANB,L1XHQ. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage XPW6R30ANB,L1XHQ.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET20011504 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET20011504.
Yes. We ship XPW6R30ANB,L1XHQ Internationally to many countries around the world.