STMicroelectronics SCTH35N65G2V-7
Product Information
Manufacturer Standard Lead Time:
26 Weeks
Detailed Description:
N-Channel 650V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
Vgs(th) (Max) @ Id:
3.2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Part Number:
SCTH35
Gate Charge (Qg) (Max) @ Vgs:
73nC @ 20V
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds:
1370pF @ 400V
Mounting Type:
Surface Mount
Supplier Device Package:
H2PAK-7
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Customer Reference:
Power Dissipation (Max):
208W (Tc)
Technology:
SiCFET (Silicon Carbide)
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Yes. We ship SCTH35N65G2V-7 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is SCTH35N65G2V-7. It has typical 26 weeks of manufacturer standard lead time. It features n-channel 650v 45a (tc) 208w (tc) surface mount h2pak-7. The typical Vgs (th) (max) of the product is 3.2v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d²pak (7 leads + tab), to-263ca. Base Part Number: scth35. The maximum gate charge and given voltages include 73nc @ 20v. It has a maximum Rds On and voltage of 67mohm @ 20a, 20v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v, 20v. The stmicroelectronics's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is +22v, -10v. The product's input capacitance at maximum includes 1370pf @ 400v. The product is available in surface mount configuration. h2pak-7 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 45a (tc). The product carries maximum power dissipation 208w (tc). This product use sicfet (silicon carbide) technology.
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