Automotive Standard:
No
Maximum Power Dissipation Pd:
208W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
14nC
Maximum Drain Source Resistance Rds:
67mΩ
Maximum Gate Source Voltage Vgs:
22 V
Forward Voltage Vf:
3.3V
Height:
15.25mm
Width:
4.8 mm
Length:
10.4mm
Package Type:
H2PAK
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
45A
Channel Type:
Type N
Maximum Operating Temperature:
175°C
Pin Count:
7
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
Vgs(th) (Max) @ Id:
5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
SCTH35N65G2V-7AG Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
edacadModelUrl:
/en/models/11686343
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
208W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 400 V
Qualification:
AEC-Q101
standardLeadTime:
52 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
H2PAK-7
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTH35
ECCN:
EAR99
