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Toshiba Semiconductor and Storage TPN19008QM,LQ

TPN19008QM-LQ Toshiba Semiconductor and Storage TPN19008QM,LQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 200µA
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Rds On (Max) @ Id, Vgs:
19mOhm @ 17A, 10V
edacadModel:
TPN19008QM,LQ Models
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/11681566
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
630mW (Ta), 57W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1400 pF @ 40 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSX-H
Supplier Device Package:
8-TSON Advance (3.1x3.1)
Current - Continuous Drain (Id) @ 25°C:
34A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPN19008
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN19008QM,LQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 200µa. The product has 175°c operating temperature range. Moreover, the product comes in 8-powervdfn. It has a maximum Rds On and voltage of 19mohm @ 17a, 10v. The maximum gate charge and given voltages include 16 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 630mw (ta), 57w (tc). The product's input capacitance at maximum includes 1400 pf @ 40 v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product u-mosx-h, is a highly preferred choice for users. 8-tson advance (3.1x3.1) is the supplier device package value. The continuous current drain at 25°C is 34a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpn19008, a base product number of the product. The product is designated with the ear99 code number.

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET19615545 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Toshiba Semiconductor and Storage" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19615545.
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