Transphorm TP65H150G4LSG
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.8V @ 500µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-PowerTDFN
Rds On (Max) @ Id, Vgs:
180mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
8 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/11594711
Package:
Cut Tape (CT)
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
598 pF @ 400 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-PQFN (8x8)
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Power Dissipation (Max):
52W (Tc)
ECCN:
EAR99
Technology:
GaNFET (Gallium Nitride)
Base Product Number:
TP65H150
edacadModel:
TP65H150G4LSG Models
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FAQs
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We accept all major payment methods for all products including ET19569154. Please check your shopping cart at the time of order.
You can order Transphorm brand products with TP65H150G4LSG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Transphorm TP65H150G4LSG. You can also check on our website or by contacting our customer support team for further order details on Transphorm TP65H150G4LSG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19569154 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Transphorm" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19569154.
Yes. We ship TP65H150G4LSG Internationally to many countries around the world.
This is manufactured by Transphorm. The manufacturer part number is TP65H150G4LSG. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.8v @ 500µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-powertdfn. It has a maximum Rds On and voltage of 180mohm @ 8.5a, 10v. The maximum gate charge and given voltages include 8 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in cut tape (ct) package . The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 598 pf @ 400 v. The product is available in surface mount configuration. 3-pqfn (8x8) is the supplier device package value. The continuous current drain at 25°C is 13a (tc). The product carries maximum power dissipation 52w (tc). The product is designated with the ear99 code number. This product use ganfet (gallium nitride) technology. Moreover, it corresponds to tp65h150, a base product number of the product.
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