Infineon Technologies IMW65R048M1HXKSA1

IMW65R048M1HXKSA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
64mOhm @ 20.1A, 18V
title:
IMW65R048M1HXKSA1
Vgs(th) (Max) @ Id:
5.7V @ 6mA
REACH Status:
REACH Unaffected
edacadModel:
IMW65R048M1HXKSA1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
edacadModelUrl:
/en/models/11483546
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+23V, -5V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
125W (Tc)
standardLeadTime:
26 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1118 pF @ 400 V
Mounting Type:
Through Hole
Series:
448
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 18 V
Supplier Device Package:
PG-TO247-3-41
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
39A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
IMW65R048
ECCN:
EAR99
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is IMW65R048M1HXKSA1. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 64mohm @ 20.1a, 18v. The typical Vgs (th) (max) of the product is 5.7v @ 6ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +23v, -5v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 125w (tc). It has a long 26 weeks standard lead time. The product's input capacitance at maximum includes 1118 pf @ 400 v. The product is available in through hole configuration. The product 448, is a highly preferred choice for users. The maximum gate charge and given voltages include 33 nc @ 18 v. pg-to247-3-41 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 39a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to imw65r048, a base product number of the product. The product is designated with the ear99 code number.

Reviews

  • Be the first to review.

FAQs

Yes. You can also search IMW65R048M1HXKSA1 on website for other similar products.
We accept all major payment methods for all products including ET19318883. Please check your shopping cart at the time of order.
You can order Infineon Technologies brand products with IMW65R048M1HXKSA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies IMW65R048M1HXKSA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies IMW65R048M1HXKSA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET19318883 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon Technologies" products on our website by using Enrgtech's Unique Manufacturing Part Number ET19318883.
Yes. We ship IMW65R048M1HXKSA1 Internationally to many countries around the world.