Nexperia USA Inc. PSMN1R9-40YSDX

PSMN1R9-40YSDX Nexperia USA Inc.
Nexperia USA Inc.

Product Information

FET Feature:
Schottky Diode (Body)
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
SC-100, SOT-669
Rds On (Max) @ Id, Vgs:
1.9mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Vgs(th) (Max) @ Id:
3.6V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
PSMN1R9-40YSDX Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/10496475
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
194W (Tc)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
6198 pF @ 20 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
200A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PSMN1R9
ECCN:
EAR99
Checking for live stock

This is manufactured by Nexperia USA Inc.. The manufacturer part number is PSMN1R9-40YSDX. The FET features of the product include schottky diode (body). It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. It has a maximum Rds On and voltage of 1.9mohm @ 25a, 10v. The maximum gate charge and given voltages include 80 nc @ 10 v. The typical Vgs (th) (max) of the product is 3.6v @ 1ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 194w (tc). It has a long 13 weeks standard lead time. The product's input capacitance at maximum includes 6198 pf @ 20 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. lfpak56, power-so8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 200a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to psmn1r9, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Test Chgs 4/Feb/2022(PCN Assembly/Origin)
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Mult DEV Label Change 12/Jun/2024(PCN Design/Specification)
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PSMN1R9-40YSD(Datasheets)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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FAQs

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We accept all major payment methods for all products including ET18855170. Please check your shopping cart at the time of order.
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You will get a confirmation email regarding your order of Nexperia USA Inc. PSMN1R9-40YSDX. You can also check on our website or by contacting our customer support team for further order details on Nexperia USA Inc. PSMN1R9-40YSDX.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18855170 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Nexperia USA Inc." products on our website by using Enrgtech's Unique Manufacturing Part Number ET18855170.
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