Toshiba Semiconductor and Storage TPWR6003PL,L1Q
Product Information
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.1V @ 1mA
Operating Temperature:
175°C
Package / Case:
8-PowerWDFN
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Rds On (Max) @ Id, Vgs:
0.6mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
960mW (Ta), 170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
10000 pF @ 15 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-DSOP Advance
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPWR6003
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship TPWR6003PL,L1Q Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPWR6003PL,L1Q. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in 8-powerwdfn. The maximum gate charge and given voltages include 110 nc @ 10 v. It has a maximum Rds On and voltage of 0.6mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 960mw (ta), 170w (tc). The product's input capacitance at maximum includes 10000 pf @ 15 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-dsop advance is the supplier device package value. The continuous current drain at 25°C is 150a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpwr6003, a base product number of the product. The product is designated with the ear99 code number.
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